共 50 条
- [1] A nondestructive method for measuring the photoelectric parameters of wafers with p-n junctionsSOLID-STATE ELECTRONICS, 1996, 39 (09) : 1379 - 1383Koshelev, OGMorozova, VA
- [2] PHOTOELECTRIC PROPERTIES OF GAAS P-N JUNCTIONSSOVIET PHYSICS-SOLID STATE, 1963, 4 (09): : 1712 - 1719GUTKIN, AANASLEDOV, DNSEDOV, VETSARENKOV, BV
- [3] PHOTOELECTRIC PROPERTIES OF ALLOY P-N JUNCTIONS IN SILICON CARBIDESOVIET PHYSICS-SOLID STATE, 1961, 2 (08): : 1722 - 1726KHOLUYANOV, GF
- [4] ELECTRICAL AND PHOTOELECTRIC PROPERTIES OF P-N JUNCTIONS IN ZINC SULFIDESOVIET PHYSICS SEMICONDUCTORS-USSR, 1967, 1 (03): : 270 - +GEORGOBIANI, ANSTEBLIN, VI
- [5] Linearization of P-N junctions by the same P-N junctions27TH EUROPEAN MICROWAVE 97, CONFERENCE + EXHIBITION - BRIDGING THE GAP BETWEEN INDUSTRY AND ACADEMIA, VOLS I AND II, 1997, : 243 - 248Bruck, YM
- [6] P-N JUNCTIONS - A TOOL FOR TEMPERATURE MEASUREMENTWATER RESOURCES RESEARCH, 1970, 6 (03) : 981 - &ENFIELD, CG
- [7] Photoelectric properties of HgMnTe photodiodes with ion etched p-n junctionsOPTO-ELECTRONICS REVIEW, 2000, 8 (03) : 251 - 262Kosyachenko, LARarenko, IMWeiguo, SZengxiong, LQibing, G
- [8] A NEW METHOD FOR INVESTIGATING ELECTRIC FIELD REGIONS OF P-N JUNCTIONSPHYSICA STATUS SOLIDI, 1969, 34 (02): : K83 - +TITCHMARSH, JMLAPWORTH, AJBOOKER, GR
- [9] ON MEASUREMENT OF MINORITY CARRIER LIFETIME IN P-N JUNCTIONSPROCEEDINGS OF THE IEEE, 1963, 51 (03) : 501 - &DLUBAC, JJMELEHY, MALEE, SC
- [10] MEASUREMENT OF DIFFUSION IN GERMANIUM BY MEANS OF P-N JUNCTIONSPHYSICAL REVIEW, 1952, 86 (04): : 615 - 616DUNLAP, WC
