Radiation-induced shallow donors in Czochralski-grown silicon crystals saturated with hydrogen

被引：0
|
作者：
机构：
来源：
| 1600年 / American Inst of Physics, Woodbury, NY, USA卷 / 76期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] New shallow donor centres in high-purity Czochralski-grown silicon single crystals
    Yu, C. H.
    Zhang, B.
    Li, Y. J.
    Lu, W.
    Shen, X. C.
    [J]. SOLID STATE COMMUNICATIONS, 2007, 142 (1-2) : 71 - 74
  • [22] CRACKING OF CZOCHRALSKI-GROWN CRYSTALS
    BRICE, JC
    [J]. JOURNAL OF CRYSTAL GROWTH, 1977, 42 (DEC) : 427 - 430
  • [23] OXYGEN PRECIPITATION AND MICRODEFECTS IN CZOCHRALSKI-GROWN SILICON-CRYSTALS
    YASUTAKE, K
    UMENO, M
    KAWABE, H
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 83 (01): : 207 - 217
  • [24] Defects in Czochralski-grown silicon crystals investigated by positron annihilation
    [J]. Ikari, Atsushi, 1600, JJAP, Minato-ku, Japan (33):
  • [25] Hydrogen-plasma-induced thermal donors in high resistivity n-type magnetic Czochralski-grown silicon
    Huang, Y. L.
    Simoen, E.
    Claeys, C.
    Rafi, J. M.
    Clauws, P.
    Job, R.
    Fahrner, W. R.
    [J]. APPLIED PHYSICS LETTERS, 2006, 89 (03)
  • [26] Defects in Czochralski-grown silicon crystals investigated by positron annihilation
    Ikari, Atsushi
    [J]. Applied Surface Science, 1995, 85 (1-4): : 253 - 258
  • [27] Electrically active radiation-induced defects in Czochralski-grown Si with low carbon content
    Markevich, VP
    Murin, LI
    Lastovskii, SB
    Medvedeva, IF
    Komarov, BA
    Lindström, JL
    Peaker, AR
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2005, 17 (22) : S2331 - S2340
  • [28] GROWTH-BEHAVIOR OF THERMALLY INDUCED MICRODEFECTS IN CZOCHRALSKI-GROWN SILICON-CRYSTALS
    KISHINO, S
    MATSUSHITA, Y
    KANAMORI, M
    IIZUKA, T
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) : C118 - C118
  • [29] OBSERVATION OF HYDROGEN IN COMMERCIAL CZOCHRALSKI-GROWN SILICON-WAFERS
    TOKUDA, Y
    KATOH, I
    OHSHIMA, H
    HATTORI, T
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (09) : 1733 - 1735
  • [30] Axial microscopic distribution of grown-in defects in Czochralski-grown silicon crystals
    [J]. Umeno, Shigeru, 1600, (32):
12345