LINEWIDTH OF IMPURITY OPTICAL ABSORPTION IN STRONGLY COMPENSATED SEMICONDUCTORS.

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作者：

Kal'fa, A.A.

Kogan, Sh.M.

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| 1839年 / 06期

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摘要：

SEMICONDUCTOR MATERIALS

引用

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[21] IMPURITY SCREENING IN COMPENSATED SEMICONDUCTORS
MIRONOV, AG
VESTNIK MOSKOVSKOGO UNIVERSITETA SERIYA 3 FIZIKA ASTRONOMIYA, 1994, 35 (02): : 74 - 79
[22] ″THERMAL-CURRENT″ INSTABILITY IN COMPENSATED SEMICONDUCTORS.
Kazarinov, R.F.
Suris, R.A.
Fuks, B.I.
1600, (06):
[23] FAR INFRARED-ABSORPTION BY DONOR PAIRS IN STRONGLY COMPENSATED SEMICONDUCTORS
SZWACKA, T
BLINOWSKI, J
JOURNAL OF PHYSICS-CONDENSED MATTER, 1990, 2 (47) : 9435 - 9444
[24] POLARON ABSORPTION OF LIGHT IN SEMICONDUCTORS.
Klyukanov, A.A.
Hung, Wu Chong
1978, 12 (08): : 881 - 885
[25] IMPURITY LEVELS IN MANY-VALLEY SEMICONDUCTORS.
Gubanov, A.I.
Davydov, S.Yu.
1973, 6 (09): : 1448 - 1452
[26] INSTABILITY OF THE CURRENT IN HIGH-RESISTIVITY COMPENSATED SEMICONDUCTORS.
Baranenkov, A.I.
1972, 5 (10): : 1765 - 1767
[27] OPTICAL DETECTION OF CESR IN SEMICONDUCTORS.
Hermann, C.
Weisbuch, C.
1978, 4 (1-2): : 63 - 69
[28] OPTICAL PROPERTIES OF NONCRYSTALLINE SEMICONDUCTORS.
Taylor, P.Craig
1987, : 19 - 44
[29] THEORY OF THE LUMINESCENCE OF HEAVILY DOPED COMPENSATED NONDEGENERATE SEMICONDUCTORS.
Levanyuk, A.P.
Osipov, V.V.
Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1973, 7 (06): : 727 - 733
[30] NOTE ON THE TREATMENT OF IMPURITY SCATTERING IN OPTICAL ABSORPTION IN SEMICONDUCTORS
DONOVAN, B
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1960, 76 (490): : 574 - 577