共 50 条
- [42] TRENCH FORMATION IN SURFACTANT MEDIATED EPITAXIAL FILM GROWTH OF GE ON SI(100) APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1992, 54 (03): : 265 - 269
- [43] Surfactant-mediated epitaxy of Ge on Si: progress in growth and electrical characterization THIN FILMS EPITAXIAL GROWTH AND NANOSTRUCTURES, 1999, 79 : 29 - 33
- [44] X-ray analysis of Si/Ge/Si(001) heterolayer structures grown by surfactant mediated epitaxy. CURRENT ISSUES IN HETEROEPITAXIAL GROWTH-STRESS RELAXATION AND SELF ASSEMBLY, 2002, 696 : 143 - 148
- [46] Epitaxial growth of Ge islands on Si(001) ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1997, 213 : 34 - PHYS
- [47] Kinetics of the heteroepitaxial growth of Ge on Si(001) JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (03): : 1251 - 1258
- [49] High resolution photoemission study of the surfactant desorption after Sb mediated Ge epitaxy on Si(001) Appl Surf Sci, (641-645):