NUMERICAL SOLUTIONS FOR SURFACE ELECTRIC FIELD DISTRIBUTIONS IN AVALANCHING p-i-n POWER DIODES.

被引：2
|
作者：
Pathak, V.K.
Gowar, J.
机构：
来源：
IEE Proceedings I: Solid State and Electron Devices | 1983年 / 130卷 / 01期
关键词：
D O I：
10.1049/ip-i-1.1983.0004
中图分类号：
学科分类号：
摘要：
7
引用
收藏
页码：17 / 23
相关论文
共 50 条
  • [41] Phonon assisted tunneling in gated p-i-n diodes
    Sedlmaier, S
    Schulze, J
    Sulima, T
    Fink, C
    Tolksdorf, C
    Bayerstadler, A
    Eisele, I
    Wang, PF
    Hilsenbeck, K
    Hansch, W
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 89 (1-3): : 116 - 119
  • [42] Thermal characterization of gallium nitride p-i-n diodes
    Dallas, J.
    Pavlidis, G.
    Chatterjee, B.
    Lundh, J. S.
    Ji, M.
    Kim, J.
    Kao, T.
    Detchprohm, T.
    Dupuis, R. D.
    Shen, S.
    Graham, S.
    Choi, S.
    APPLIED PHYSICS LETTERS, 2018, 112 (07)
  • [43] Electrical characterization of transparent p-i-n heterojunction diodes
    Hoffman, RL
    Wager, JF
    Jayaraj, MK
    Tate, J
    JOURNAL OF APPLIED PHYSICS, 2001, 90 (11) : 5763 - 5767
  • [44] Reverse-recovery of diamond p-i-n diodes
    Traore, Aboulaye
    Nakajima, Akira
    Makino, Toshiharu
    Kuwabara, Daisuke
    Kato, Hiromitsu
    Ogura, Masahiko
    Takeuchi, Daisuke
    Yamasaki, Satoshi
    IET POWER ELECTRONICS, 2018, 11 (04) : 695 - 699
  • [45] TRANSIT-TIME CONSIDERATIONS IN P-I-N DIODES
    LUCOVSKY, G
    EMMONS, RB
    SCHWARZ, RF
    JOURNAL OF APPLIED PHYSICS, 1964, 35 (3P1) : 622 - &
  • [46] USE OF P-I-N DIODES IN NUCLEAR ELECTRONIC CIRCUITS
    HORVATH, P
    MUKHIN, SV
    RICHVICKIJ, SV
    STREIT, V
    ZVADA, M
    NUCLEAR INSTRUMENTS & METHODS, 1973, 108 (02): : 357 - 363
  • [47] RF Limiter Metamaterial Using p-i-n Diodes
    Katko, Alexander R.
    Hawkes, Allen M.
    Barrett, John P.
    Cummer, Steven A.
    IEEE ANTENNAS AND WIRELESS PROPAGATION LETTERS, 2011, 10 : 1571 - 1574
  • [48] Voltage Noise Characteristics of Polysilicon P-I-N Diodes
    Jamshidi-Roudbari, Abbas
    Hatalis, Miltiadis K.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (04) : 1054 - 1062
  • [49] Forward leakage currents in GaN p-i-n diodes
    Lu, Ao
    Pan, Xiaofei
    Zhou, Xinjie
    Li, Yang
    Wang, Xiao
    Ao, Jinping
    Yan, Dawei
    SOLID-STATE ELECTRONICS, 2024, 217
  • [50] Transient injection and fast switch on in p-i-n diodes
    Mnatsakanov, T.T.
    Tandoev, A.G.
    Yurkov, S.N.
    Levinshtein, M.E.
    Ivanov, P.A.
    Palmour, J.W.
    Journal of Applied Physics, 2006, 99 (07):
12345