2D-3D transition in highly strained GaAs/Ga1-xInxAs heterostructures by transmission electron microscopy

被引：0
|
作者：
Lab de Physique du Solide, Paris, France [1 ]
机构：
来源：
J Cryst Growth | / 1-2卷 / 6-16期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] Transformation of the elemental composition on the GaN surface during a 2D-3D transition
    Maidebura, Y. E.
    Mansurov, V. G.
    Malin, T., V
    Zhuravlev, K. S.
    APPLIED SURFACE SCIENCE, 2022, 577
  • [42] 1D to 2D Transition in Tellurium Observed by 4D Electron Microscopy
    Londono-Calderon, Alejandra
    Williams, Darrick J.
    Ophus, Colin
    Pettes, Michael T.
    SMALL, 2020, 16 (49)
  • [43] 1D to 2D Transition in Tellurium Observed by 4D Electron Microscopy
    Londoño-Calderon, Alejandra
    Williams, Darrick J.
    Ophus, Colin
    Pettes, Michael T.
    Pettes, Michael T. (pettesmt@lanl.gov), 1600, Wiley-VCH Verlag (16):
  • [44] Limitation of the 2D parallel flow assumption in thermosolutal convection: 2D-3D transition
    Choukairy, K.
    De Sa, C.
    Bennacer, R.
    PROGRESS IN COMPUTATIONAL FLUID DYNAMICS, 2016, 16 (02): : 102 - 107
  • [45] Charge and Compositional Effects on the 2D-3D Transition in Octameric AgAu Clusters
    Heard, Christopher
    Shayeghi, Armin
    Schaefer, Rolf
    Johnston, Roy
    ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE-INTERNATIONAL JOURNAL OF RESEARCH IN PHYSICAL CHEMISTRY & CHEMICAL PHYSICS, 2016, 230 (5-7): : 955 - 975
  • [46] DEPTH-RESOLVED MEASUREMENT OF LATTICE-RELAXATION IN GA1-XINXAS/GAAS STRAINED-LAYER SUPERLATTICES BY MEANS OF GRAZING-INCIDENCE X-RAY-DIFFRACTION
    PIETSCH, U
    METZGER, H
    RUGEL, S
    JENICHEN, B
    ROBINSON, IK
    JOURNAL OF APPLIED PHYSICS, 1993, 74 (04) : 2381 - 2387
  • [47] OBSERVATION OF 2D-3D TRANSITION IN TL2BA2CACU2OX
    KOPYLOV, VN
    TOGONIDZE, TG
    SCHEGOLEV, IF
    PHYSICA C, 1992, 195 (3-4): : 379 - 382
  • [48] Oscillations of 2D electron density in GaAs/Ga0.67Al0.33As heterostructures in the QHE regime
    Raymond, A
    Juillaguet, S
    Elmezouar, I
    Zawadzki, W
    Sadowski, ML
    Kamal-Saadi, M
    Etienne, B
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1999, 14 (10) : 915 - 920
  • [49] Oscillations of 2D electron density in GaAs/Ga0.67Al0.33As heterostructures in the QHE regime
    Groupe d'Etude des Semiconducteurs, UMR, CNRS, 5650, Université Montpellier II, 34095 Montpellier Cédex, France
    不详
    不详
    不详
    不详
    Semicond Sci Technol, 10 (915-920):
  • [50] COMPARISON OF DEVICE PERFORMANCE OF HIGHLY STRAINED GA1-XINXAS/AL0.48IN0.52AS (0.53-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.90) MODFETS
    CHOUGH, KB
    CHANG, TY
    FEUER, MD
    LALEVIC, B
    ELECTRONICS LETTERS, 1992, 28 (03) : 329 - 330
12345