Effect of electromechanical coupling on the strain in AlGaN/GaN heterojunction field effect transistors

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[1] [1,Jogai, B.
[2] Albrecht, J.D.
[3] Pan, E.
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Jogai, B. (brahmanand.jogai@wpafb.af.mil) | 1600年 / American Institute of Physics Inc.卷 / 94期
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