Monolayer epitaxy of GaAs at 650°C by metal-organic chemical-vapor deposition with surface photoabsorption monitoring

被引：0
|
作者：
Kim, Y.D.
Nakamura, F.
Yoon, E.
Forbes, D.V.
Coleman, J.J.
机构：
来源：
Applied Physics Letters | 1996年 / 69卷 / 27期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Monolayer epitaxy of GaAs at 650 degrees C by metal-organic chemical-vapor deposition with surface photoabsorption monitoring
    Kim, YD
    Nakamura, F
    Yoon, E
    Forbes, DV
    Coleman, JJ
    APPLIED PHYSICS LETTERS, 1996, 69 (27) : 4209 - 4211
  • [2] Growth mechanism of InAs quantum dots on GaAs by metal-organic chemical-vapor deposition
    Chung, T
    Walter, G
    Holonyak, N
    JOURNAL OF APPLIED PHYSICS, 2005, 97 (05)
  • [3] SPECTRAL OBSERVATION OF AS-STABILIZED GAAS-SURFACES IN METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION USING SURFACE PHOTOABSORPTION
    YAMAUCHI, Y
    UWAI, K
    KOBAYASHI, N
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1993, 32 (08): : 3363 - 3369
  • [4] Thickness monitoring of GaAs growth by surface photoabsorption in metalorganic chemical vapor deposition
    Nakamura, F
    Kim, YD
    Yoon, E
    Forbes, DV
    Coleman, JJ
    JOURNAL OF APPLIED PHYSICS, 1998, 83 (02) : 775 - 778
  • [5] High quality Ge epitaxy on GaAs (100) grown by metal-organic chemical vapor deposition
    Cheng, Y. B.
    Chia, C. K.
    Chai, Y.
    Chi, D. Z.
    THIN SOLID FILMS, 2012, 522 : 340 - 344
  • [6] IN-SITU SPECTRUM OBSERVATION OF GA DEPOSITION PROCESS DURING GAAS METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION USING SURFACE PHOTOABSORPTION
    YAMAUCHI, Y
    UWAI, K
    KOBAYASHI, N
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (10A): : L1380 - L1382
  • [7] ZnO nanotips grown on Si substrates by metal-organic chemical-vapor deposition
    J. Zhong
    S. Muthukumar
    G. Saraf
    H. Chen
    Y. Chen
    Y. Lu
    Journal of Electronic Materials, 2004, 33 : 654 - 657
  • [8] Effect of the conditions of metal-organic chemical-vapor epitaxy on the properties of GaInAsN epitaxial films
    V. M. Danil’tsev
    D. M. Gaponova
    M. N. Drozdov
    Yu. N. Drozdov
    A. V. Murel’
    D. A. Pryakhin
    O. I. Khrykin
    V. I. Shashkin
    Semiconductors, 2005, 39 : 8 - 10
  • [9] ZnO nanotips grown on Si substrates by metal-organic chemical-vapor deposition
    Zhong, J
    Muthukumar, S
    Saraf, G
    Chen, H
    Chen, Y
    Lu, Y
    JOURNAL OF ELECTRONIC MATERIALS, 2004, 33 (06) : 654 - 657
  • [10] Effect of the conditions of metal-organic chemical-vapor epitaxy on the properties of GaInAsN epitaxial films
    Danil'tsev, VM
    Gaponova, DM
    Drozdov, MN
    Drozdov, YN
    Murel', AV
    Pryakhin, DA
    Khrykin, OI
    Shashkin, VI
    SEMICONDUCTORS, 2005, 39 (01) : 8 - 10
12345