Study of In0.53Ga0.47As/In0.52Al0.48 quantum wells on InP by spectroscopic ellipsometry and photoluminescence

InGaAs/InAlAs quantum wells of different well widths were measured by multiple angle of incidence spectroscopic ellipsometry in the wavelength range from 280 to 865 nm. Comparing the experimental data to the calculated results of a theoretical seven-layer model using our refractive index (n - ik) curves of the materials involved in our structures, we determined all the layer thicknesses, especially the InGaAs well widths. For our samples, in addition, low temperature photoluminescence studies were performed and compared to the results of potential well calculations. A good agreement is obtained between the well widths determined by ellipsometry and photoluminescence, respectively. Thin interface layers, embedding the InGaAs quantum wells are not observed in the wavelength range from 280 to 700 nm.