Thermal desorption spectra of SiO2 films deposited on Si and on thermal SiO2 by tetraethylorthosilicate/O3 atmospheric-pressure chemical vapor deposition

被引:0
|
作者
Dept. of Chemical System Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan [1 ]
不详 [2 ]
不详 [3 ]
机构
来源
J Appl Phys | / 10卷 / 7140-7145期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [41] Chemical vapor deposition of Ge nanocrystals on SiO2
    Baron, T
    Pelissier, B
    Perniola, L
    Mazen, F
    Hartmann, JM
    Rolland, G
    APPLIED PHYSICS LETTERS, 2003, 83 (07) : 1444 - 1446
  • [42] Fast growth of graphene on SiO2/Si substrates by atmospheric pressure chemical vapor deposition with floating metal catalysts
    Na Liu
    Jia Zhang
    Yunfeng Qiu
    Jie Yang
    PingAn Hu
    Science China Chemistry, 2016, 59 : 707 - 712
  • [43] Fast growth of graphene on SiO2/Si substrates by atmospheric pressure chemical vapor deposition with floating metal catalysts
    Liu, Na
    Zhang, Jia
    Qiu, Yunfeng
    Yang, Jie
    Hu, PingAn
    SCIENCE CHINA-CHEMISTRY, 2016, 59 (06) : 707 - 712
  • [44] Ferroelectric properties of YMnO3 films deposited by metalorganic chemical vapor deposition on Pt/Ti/SiO2/Si substrates
    Kim, D
    Killingensmith, D
    Dalton, D
    Olariu, V
    Gnadinger, F
    Rahman, M
    Mahmud, A
    Kalkur, TS
    MATERIALS LETTERS, 2006, 60 (03) : 295 - 297
  • [45] GAS-PHASE NUCLEATION IN AN ATMOSPHERIC-PRESSURE CHEMICAL VAPOR-DEPOSITION PROCESS FOR SIO2-FILMS USING TETRAETHYLORTHOSILICATE (TEOS)
    ADACHI, M
    OKUYAMA, K
    TOHGE, N
    SHIMADA, M
    SATOH, J
    MUROYAMA, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992, 31 (10A): : L1439 - L1442
  • [46] Chemical vapor cleaning of Si and SiO2 surfaces
    Beck, SE
    George, MA
    Bohling, DA
    Moniot, DA
    Young, KM
    Badowski, AA
    Robertson, EA
    1996 ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE AND WORKSHOP - ASMC 96 PROCEEDINGS: THEME - INNOVATIVE APPROACHES TO GROWTH IN THE SEMICONDUCTOR INDUSTRY, 1996, : 175 - 178
  • [47] Impurities in SiO2 films deposited by plasma-enhanced chemical vapor deposition using tetraethoxysilane
    Maeda, Naohira
    Okimura, Kunio
    Shibata, Akira
    Tsuchida, Kouzou
    Saji, Eiji
    Electrical Engineering in Japan (English translation of Denki Gakkai Ronbunshi), 1997, 121 (04): : 11 - 17
  • [48] Impurities in SiO2 films deposited by plasma-enhanced chemical vapor deposition using tetraethoxysilane
    Maeda, N
    Okimura, K
    Shibata, A
    Tsuchida, K
    Saji, E
    ELECTRICAL ENGINEERING IN JAPAN, 1997, 121 (04) : 11 - 17
  • [49] Residual stress analysis of SiO2 films deposited by plasma-enhanced chemical vapor deposition
    Choi, JK
    Lee, J
    Yoo, JB
    Maeng, JS
    Kim, YM
    SURFACE & COATINGS TECHNOLOGY, 2000, 131 (1-3): : 153 - 157
  • [50] CHEMICAL VAPOR-DEPOSITION OF COPPER ON SI(111) AND SIO2 SUBSTRATES
    LAMPEONNERUD, C
    JANSSON, U
    HARSTA, A
    CARLSSON, JO
    JOURNAL OF CRYSTAL GROWTH, 1992, 121 (1-2) : 223 - 234