Rutherford backscattering studies of solid phase recrystallization and incorporation in erbium-implanted silicon

被引：0

作者：

Li, Dai-qing ^{[1
]}

Ren, Ting-qi ^{[1
]}

Gong, Bao-an ^{[1
]}

Zhang, Bei ^{[1
]}

Chen, Kong-jun ^{[1
]}

Zhu, Pei-ran ^{[1
]}

Xu, Tian-bing ^{[1
]}

机构：

[1] Yantai Teachers Univ, Yantai, China

来源：

Materials science & engineering. B, Solid-state materials for advanced technology | 1995年 / B30卷 / 01期

关键词：

Annealing - Crystal growth from melt - Doping (additives) - Epitaxial growth - Erbium - Impurities - Ion implantation - Recrystallization (metallurgy) - Rutherford backscattering spectroscopy - Silicon wafers - Thermal diffusion - Thermal effects;

D O I：

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中图分类号：

学科分类号：

摘要：

The rapid thermal annealing temperature dependence of solid phase epitaxial recrystallization and incorporation of Er-implanted silicon has been studied. It was observed that the initial recrystallization is epitaxial, followed by a disruption of regrowth in the doped region for the samples irradiated with 350 keV and 150 keV Er ions to doses of 1 × 1015 cm-2 and 7 × 1014 cm-2 respectively. The maximum incorporation concentration in the regrowth area for the former decreases with increasing annealing temperature. However, an anomalous enhancement of the maximum incorporation concentration is observed after annealing at 850 °C for the latter.

引用

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