Growth process in initial stage of GaAs/GaP(001) by molecular beam epitaxy

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[1] Yoshikawa, Masahiro
[2] Nomura, Takashi
[3] Ishikawa, Kenji
[4] Hagino, Minoru
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Yoshikawa, Masahiro | 1600年 / JJAP, Minato-ku, Japan卷 / 34期
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