Creep in Silicon Nitride at High Temperatures.

被引：0
|
作者：
Engel, W.
Gugel, E.
Thuemmler, F.
机构：
来源：
American Society of Mechanical Engineers (Paper) | 1973年
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中图分类号：
TQ17 [硅酸盐工业];
学科分类号：
0805 ; 080502 ;
摘要：
Creep experiments on reaction-sintered and hot-pressed silicon nitride were carried out at temperatures of 1200 to 1400 degree C using a four-point bending apparatus. The initially high rate of creep falls with reaction-sintered Si//3N//4 more rapidly it does with the hot-pressed material, so that the former shows a better creep behavior at temperatures of 1200 degree C and above. Higher MgO contents have a harmful effect. Grain-boundary sliding or viscous flow of the glassy phase present between grains is assumed to be the predominant mechanism of high-temperature deformation of hot-pressed silicon nitride.
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页码：415 / 430
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