Effects of interface roughness and conducting filaments in metal-oxide-semiconductor tunnel structures

被引：0
|
作者：
Ting, D.Z.-Y.
McGill, T.C.
机构：
来源：
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena | 1998年 / 16卷 / 04期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Study on the interface thermal stability of metal-oxide-semiconductor structures by inelastic electron tunneling spectroscopy
    Huang, CF
    Tsui, BY
    Tzeng, PJ
    Lee, LS
    Tsai, MJ
    APPLIED PHYSICS LETTERS, 2006, 88 (26)
  • [22] On the role of interface states in low-voltage leakage currents of metal-oxide-semiconductor structures
    Crupi, F
    Ciofi, C
    Germanò, A
    Iannaccone, G
    Stathis, JH
    Lombardo, S
    APPLIED PHYSICS LETTERS, 2002, 80 (24) : 4597 - 4599
  • [23] On the positive charge and interface states in metal-oxide-semiconductor capacitors
    Meinertzhagen, A
    Petit, C
    Yard, G
    Jourdain, M
    ElHdiy, A
    JOURNAL OF APPLIED PHYSICS, 1996, 80 (01) : 271 - 277
  • [24] INTERFACE CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR CAPACITORS WITH ULTRATHIN OXIDES
    CHARI, KS
    KAR, S
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (07) : 2046 - 2049
  • [25] INTERFACE AND BULK TRAP GENERATION IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS
    BUCHANAN, DA
    DIMARIA, DJ
    JOURNAL OF APPLIED PHYSICS, 1990, 67 (12) : 7439 - 7452
  • [26] BIAS-TEMPERATURE STRESS ON METAL-OXIDE-SEMICONDUCTOR STRUCTURES AS COMPARED TO IONIZING IRRADIATION AND TUNNEL INJECTION
    HALLER, G
    KNOLL, M
    BRAUNIG, D
    WULF, F
    FAHRNER, WR
    JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) : 1844 - 1850
  • [27] 2 COMPONENTS OF TUNNELING CURRENT IN METAL-OXIDE-SEMICONDUCTOR STRUCTURES
    EITAN, B
    KOLODNY, A
    APPLIED PHYSICS LETTERS, 1983, 43 (01) : 106 - 108
  • [28] CHARACTERIZATION OF SURFACE-PLASMONS ON METAL-OXIDE-SEMICONDUCTOR STRUCTURES
    TAMM, IR
    DAWSON, P
    CONNOLLY, MP
    RAZA, SH
    GAMBLE, HS
    JOURNAL OF MODERN OPTICS, 1991, 38 (08) : 1593 - 1598
  • [29] Electrical properties of MgO/GaN metal-oxide-semiconductor structures
    Ogidi-Ekoko, Onoriode N.
    Goodrich, Justin C.
    Howzen, Alexandra J.
    Peart, Matthew R.
    Strandwitz, Nicholas C.
    Wierer, Jonathan J., Jr.
    Tansu, Nelson
    SOLID-STATE ELECTRONICS, 2020, 172 (172)
  • [30] EFFECTS OF PROCESSING CONDITIONS ON NEGATIVE BIAS TEMPERATURE INSTABILITY IN METAL-OXIDE-SEMICONDUCTOR STRUCTURES
    LU, D
    RUGGLES, GA
    WORTMAN, JJ
    APPLIED PHYSICS LETTERS, 1988, 52 (16) : 1344 - 1346
12345