Green/blue light emission and luminescent mechanism of nanocrystalline silicon embedded in silicon oxide thin film

被引：0
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作者：
Zhu, Mei-Fang
Chen, Guo
Xu, Huai-Zhe
Han, Y.I.-Qin
Xie, Kan
Liu, Zhen-Xiang
Tang, Yong
Chen, Pei-Yi
机构：
[1] Department of Physics, Graduate School, Univ. of Sci. and Technol. of China, Beijing 100039, China
[2] State Key Lab. Superlattices M., P. O. Box 912, Beijing 100084, China
[3] Institute of Physics, Academia Sinica, Beijing 100080, China
[4] Institute of Microelectronics, Tsinghua University, Beijing 100084, China
来源：
Wuli Xuebao/Acta Physica Sinica | 1997年 / 46卷 / 08期
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摘要：
Green/blue light emission with peak position around 2.3-2. 4eV at room temperature was observed from Si nanocrystals embedded in silicon-oxide films. The effects of thermal annealing on the structure, silicon core level and photoluminescence of silicon oxide films with nanostructures were studied. PL spectra consisted of peaks of 1.86 and 2. 38eV, which were independent of annealing temperature Ta. Silicon and SiO2 phases were separated in the annealing temperature range. Both PL intensity and the amount of Si4+ increased repidly as Ta > 750 °C . From our observation, the origin of green/blue light emission is suggested to be related to the defects at the interface and in the SiOx network.
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页码：1650 / 1651
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