Spin-dependent transport in amorphous silicon thin-film transistors

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作者：
Technische Universitaet Muenchen, Garching, Germany [1 ]
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来源：
J Non Cryst Solids | / pt 2卷 / 1117-1120期
关键词：
Amorphous silicon - Annealing - Defects - Degradation - Gates (transistor) - Photoconductivity;
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摘要：
Spin-dependent transport (SDT) has been used to study defects in thin film transistors (TFT) under various bias conditions and for different degradation stages: (i) after application of a strong gate bias at 450 K for a prolonged period of time (thermal bias annealing), and (ii) after pulse light soaking at room temperature. Threshold voltage shifts versus defect density as detected by SDT are compared for both degradation methods. The applicability of the method to TFTs as small as 10 × 100 μm2 is demonstrated.
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