Strong enhancement of the photoluminescence efficiency from InAs quantum dots

被引：0
|
作者：
机构：
[1] Zhao, Q.X.
[2] Willander, M.
[3] Wang, S.M.
[4] Wei, Y.Q.
[5] Sadeghi, M.
[6] Yang, J.H.
来源：
Zhao, Q.X. (zhao@fy.chalmers.se) | 1600年 / American Institute of Physics Inc.卷 / 93期
关键词：
Photoluminescence - Semiconducting gallium arsenide - Semiconducting indium compounds - Spectroscopic analysis - Wetting;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
InAs quantum dots (QDs) were investigated using optical spectroscopy to analyze the strong enhancement of their photoluminescence efficiency. The intensity of the InAs QD emission increased by more than an order of magnitude at the excitation density of 60 W/cm2 after the introduction of a tunneling barrier between the InAs layer and the GaAs cap layer. The enhancement of the optical recombination efficiency was found to be due to the suppression of the nonradiative transitions in the wetting layer.
引用
收藏
相关论文
共 50 条
  • [21] Photoluminescence from low temperature grown InAs/GaAs quantum dots
    Sreenivasan, D.
    Haverkort, J. E. M.
    Eijkemans, T. J.
    Notzel, R.
    APPLIED PHYSICS LETTERS, 2007, 90 (11)
  • [22] Temperature dependence of photoluminescence from InAs quantum dots with an asymmetric InGaAs quantum well
    Park, Ho Jin
    Kim, Jong Ho
    Ryu, H. H.
    Jeon, Minhyon
    Leem, J. Y.
    Kim, Jin Soo
    Kim, Jong Su
    Son, J. S.
    Lee, D. Y.
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2007, 51 (04) : 1383 - 1388
  • [23] Ultrafast photoluminescence spectroscopy of InAs/GaAs quantum dots
    Neudert, K.
    Trojanek, F.
    Kuldova, K.
    Oswald, J.
    Hospodkova, A.
    Maly, P.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 4, 2009, 6 (04): : 853 - +
  • [24] Photoluminescence pressure coefficients of InAs/GaAs quantum dots
    Luo, JW
    Li, SS
    Xia, JB
    Wang, LW
    PHYSICAL REVIEW B, 2005, 71 (24)
  • [25] Photoluminescence of InAs quantum dots grown on GaAs surface
    Wang, JZ
    Yang, Z
    Yang, CL
    Wang, ZG
    APPLIED PHYSICS LETTERS, 2000, 77 (18) : 2837 - 2839
  • [26] Photoluminescence of isolated quantum dots in metastable InAs arrays
    Talalaev, VG
    Novikov, BV
    Smirnov, MA
    Kachkanov, VV
    Gobsch, G
    Goldhahn, R
    Winzer, A
    Cirlin, GE
    Egorov, VA
    Ustinov, VM
    NANOTECHNOLOGY, 2002, 13 (02) : 143 - 148
  • [27] Photoluminescence comparation of InAs quantum dots with different capping
    Wei, YQ
    Zhang, ZY
    Wang, ZG
    Wang, SM
    Zhao, QX
    Wang, XD
    Larsson, A
    2003 INTERNATIONAL CONFERENCE INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2003, : 168 - 170
  • [28] Photoluminescence and electromodulation study of InAs/GaAs quantum dots
    Kim, SS
    Cheong, H
    Song, JD
    Park, YM
    Shin, JC
    Park, YJ
    Choi, WJ
    Lee, JI
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2004, 45 (01) : 145 - 148
  • [29] Photoluminescence of ultra small InAs/GaAs quantum dots
    Lin, YG
    Wu, CH
    Tyan, SL
    Lin, SD
    Lee, CP
    MODERN PHYSICS LETTERS B, 2005, 19 (18): : 907 - 917
  • [30] Controlled Photoluminescence Enhancement of High Efficiency Quantum Dots by Localized Surface Plasmons
    Zhao, Jin Yang
    Chen, Lixuan
    Zhou, Miao
    Chen, Hsiao-Hsien
    Lin, Hsi-Chien
    Zhang, Xin
    Zhou, Hang
    2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2019,
12345