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- [1] TRANSMISSION ELECTRON-MICROSCOPE OBSERVATION OF CUBIC GAN GROWN BY METALORGANIC VAPOR-PHASE EPITAXY WITH DIMETHYLHYDRAZINE ON (001) GAAS JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1A): : 18 - 22
- [3] Defect states in cubic GaN epilayer grown on GaAs by metalorganic vapor phase epitaxy PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2001, 188 (02): : 681 - 685
- [4] Influence of Si doping on optical properties of cubic GaN grown on GaAs (001) substrates by metalorganic vapor phase epitaxy PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 2000, 1 : 70 - 73
- [5] Photoluminescence properties of cubic GaN grown on GaAs(100) substrates by metalorganic vapor phase epitaxy Appl Phys Lett, 15 (2067-2069):
- [7] Cubic GaN films on GaAs (001) substrates without deep-level luminescence grown by metalorganic vapor phase epitaxy PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2000, 180 (01): : 15 - 19
- [8] Cubic GaN films on GaAs (001) substrates without deep-level luminescence grown by metalorganic vapor phase epitaxy Physica Status Solidi (A) Applied Research, 2000, 180 (01): : 15 - 19
- [9] Transmission electron microscope analysis of microstructures in GaN grown on (111)A and (111)B of GaAs by metalorganic hydrogen chloride vapor-phase epitaxy PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2001, 188 (02): : 557 - 560
- [10] Reduced defect densities in cubic GaN epilayers with AlGaN/GaN superlattice underlayers grown on (001) GaAs substrates by metalorganic vapor phase epitaxy JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (03): : 958 - 965