THERMAL- AND RADIATION-STABILITY OF HYDROGEN-IMPLANTED SILICON STANDARDS FOR ION-BEAM ANALYSIS.

被引：0
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作者：
Whitlow, H.J. [1 ]
Keinonen, J. [1 ]
Hautala, M. [1 ]
Hautojarvi, A. [1 ]
机构：
[1] Univ of Helsinki, Dep of Physics,, Helsinki, Finl, Univ of Helsinki, Dep of Physics, Helsinki, Finl
来源：
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | 1984年 / 233卷 / 03期
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摘要：
39
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页码：505 / 510
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