Computer simulation of the effects of B, P concentration on the pore distribution in the amorphous Co-B, Co-P alloys

被引：0

作者：

Van Hoang, Vo ^{[1
]}

Hung, Nguyen Hoang ^{[1
]}

Anh, Nguyen Huynh Tuan ^{[1
]}

机构：

[1] Dept. of Physics, Natl. University of HoChiMinh City, 227 Nguyen Van Cu str., Distr. 5, HochiMinh City, Viet Nam

来源：

Journal of Metastable and Nanocrystalline Materials | 2003年 / 18卷

关键词：

Amorphous materials - Boron - Computer simulation - Concentration (process) - Diffusion - Glass transition - Molecular dynamics - Partial differential equations - Pore size - Temperature control;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The Static Relaxation simulation and systematic analysis of the pore distribution in the amorphous Co-B, Co-P alloys with Pak - Doyam like pair potentials for all the bonds in systems have been carried out. Calculations showed the existence of large vacancy - like pores in the amorphous state at the temperature 0 Kelvin (the native vacancies). The distinct differences of the effect of B, P concentration on the pore distribution in the amorphous Co -B, Co -P alloys were obtained and presented.

引用

页码：43 / 48

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