Computer simulation of the effects of B, P concentration on the pore distribution in the amorphous Co-B, Co-P alloys

被引：0
|
作者：
Van Hoang, Vo [1 ]
Hung, Nguyen Hoang [1 ]
Anh, Nguyen Huynh Tuan [1 ]
机构：
[1] Dept. of Physics, Natl. University of HoChiMinh City, 227 Nguyen Van Cu str., Distr. 5, HochiMinh City, Viet Nam
来源：
Journal of Metastable and Nanocrystalline Materials | 2003年 / 18卷
关键词：
Amorphous materials - Boron - Computer simulation - Concentration (process) - Diffusion - Glass transition - Molecular dynamics - Partial differential equations - Pore size - Temperature control;
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学科分类号：
摘要：
The Static Relaxation simulation and systematic analysis of the pore distribution in the amorphous Co-B, Co-P alloys with Pak - Doyam like pair potentials for all the bonds in systems have been carried out. Calculations showed the existence of large vacancy - like pores in the amorphous state at the temperature 0 Kelvin (the native vacancies). The distinct differences of the effect of B, P concentration on the pore distribution in the amorphous Co -B, Co -P alloys were obtained and presented.
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页码：43 / 48
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