Oxidation temperature dependent restructuring of the Pb defect at the (111) Si/SiO2 interface

被引：0
|
作者：
机构：
[1] Stesmans, A.
来源：
Stesmans, A. | 1600年 / Pergamon Press Inc, Tarrytown, NY, United States卷 / 96期
关键词：
Interfaces; (materials);
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] OXIDATION TEMPERATURE-DEPENDENT RESTRUCTURING OF THE P-B DEFECT AT THE (111)SI/SIO2 INTERFACE
    STESMANS, A
    SOLID STATE COMMUNICATIONS, 1995, 96 (06) : 397 - 399
  • [2] THEORY OF THE PB CENTER AT THE [111] SI/SIO2 INTERFACE
    EDWARDS, AH
    PHYSICAL REVIEW B, 1987, 36 (18): : 9638 - 9648
  • [3] STRUCTURAL RELAXATION OF PB DEFECTS AT THE (111)SI/SIO2 INTERFACE AS A FUNCTION OF OXIDATION TEMPERATURE - THE PB-GENERATION-STRESS RELATIONSHIP
    STESMANS, A
    PHYSICAL REVIEW B, 1993, 48 (04): : 2418 - 2435
  • [4] HYPERFINE INTERACTIONS OF THE PB CENTER AT THE SIO2 SI(111) INTERFACE
    COOK, M
    WHITE, CT
    PHYSICAL REVIEW LETTERS, 1987, 59 (15) : 1741 - 1744
  • [5] Influence of SiO2/Si(111) interface structure on oxidation rate
    Takahashi, K.
    Nohira, H.
    Nakamura, I.
    Seman, M.B.
    Ohmi, T.
    Hattori, T.
    Extended Abstracts of International Workshop on Gate Insulator, IWGI 2001, 2001, : 140 - 142
  • [6] PRESSURE-DEPENDENCE OF THE PB CENTER AT THE (111) SI/SIO2 INTERFACE
    JOHNSON, NM
    SHAN, W
    YU, PY
    PHYSICAL REVIEW B, 1989, 39 (05): : 3431 - 3434
  • [7] THE ROLE OF SIO IN SI OXIDATION AT A SI/SIO2 INTERFACE
    RAIDER, SI
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (03) : C136 - C136
  • [8] DEFECT MICROCHEMISTRY AT THE SIO2/SI INTERFACE
    RUBLOFF, GW
    HOFMANN, K
    LIEHR, M
    YOUNG, DR
    PHYSICAL REVIEW LETTERS, 1987, 58 (22) : 2379 - 2382
  • [9] SiO2 valence band near the SiO2/Si(111) interface
    Musashi Inst of Technology, Tokyo, Japan
    Appl Surf Sci, (119-122):
  • [10] SiO2 valence band near the SiO2/Si(111) interface
    Nohira, H
    Hattori, T
    APPLIED SURFACE SCIENCE, 1997, 117 : 119 - 122
12345