InGaN-based blue light-emitting diodes and laser diodes

被引：0
|
作者：
R and D Department, Nichia Chem. Indust., Ltd., 491 O., Tokushima, Japan [1 ]
机构：
来源：
J Cryst Growth | / 290-295期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] InGaN-Based Light-Emitting Diodes With an AlGaN Staircase Electron Blocking Layer
    Chang, Shoou-Jinn
    Yu, Sheng-Fu
    Lin, Ray-Ming
    Li, Shuguang
    Chiang, Tsung-Hsun
    Chang, Sheng-Po
    Chen, Chang-Ho
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2012, 24 (19) : 1737 - 1740
  • [42] Design strategies for enhancing carrier localization in InGaN-based light-emitting diodes
    Yang, Yujue
    Ma, Ping
    Wei, Xuecheng
    Yan, Dan
    Wang, Yafang
    Zeng, Yiping
    JOURNAL OF LUMINESCENCE, 2014, 155 : 238 - 243
  • [43] A novel wavelength-adjusting method in InGaN-based light-emitting diodes
    Deng, Zhen
    Jiang, Yang
    Ma, Ziguang
    Wang, Wenxin
    Jia, Haiqiang
    Zhou, Junming
    Chen, Hong
    SCIENTIFIC REPORTS, 2013, 3
  • [44] Investigation of optoelectronic characteristics of indium composition in InGaN-based light-emitting diodes
    Usman, Muhammad
    Mushtaq, Urooj
    Zheng, Dong-Guang
    Han, Dong-Pyo
    Muhammad, Nazeer
    MATERIALS RESEARCH EXPRESS, 2019, 6 (04)
  • [45] Efficient and reliable homoepitaxially-grown InGaN-based light-emitting diodes
    Cao, XA
    Teetsov, JM
    LeBoeuf, SF
    Arthur, SD
    Kretchmer, J
    GaN, AIN, InN and Their Alloys, 2005, 831 : 581 - 586
  • [46] InGaN-Based Light-Emitting Diodes with a Multiple-Air-Gap Layer
    Lin, Chia-Feng
    Yang, Chung-Chieh
    Lin, Chun-Min
    Chen, Kuei-Ting
    Hu, Chih-Wei
    Tsay, Jenq-Dar
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2009, 12 (10) : H365 - H368
  • [47] On the origin of efficiency roll-off in InGaN-based light-emitting diodes
    Cao, X. A.
    Yang, Y.
    Guo, H.
    JOURNAL OF APPLIED PHYSICS, 2008, 104 (09)
  • [48] Efficient InGaN-Based Red Light-Emitting Diodes by Modulating Trench Defects
    Pan, Zuojian
    Chen, Zhizhong
    Zhang, Haodong
    Yang, Han
    Deng, Chuhan
    Dong, Boyan
    Wang, Daqi
    Li, Yuchen
    Lin, Hai
    Chen, Weihua
    Jiao, Fei
    Kang, Xiangning
    Jia, Chuanyu
    Liang, Zhiwen
    Wang, Qi
    Zhang, Guoyi
    Shen, Bo
    ADVANCED FUNCTIONAL MATERIALS, 2024, 34 (25)
  • [49] Efficient emission of InGaN-based light-emitting diodes: toward orange and red
    SHENGNAN ZHANG
    JIANLI ZHANG
    JIANGDONG GAO
    XIAOLAN WANG
    CHANGDA ZHENG
    MENG ZHANG
    XIAOMING WU
    LONGQUAN XU
    JIE DING
    ZHIJUE QUAN
    FENGYI JIANG
    Photonics Research, 2020, (11) : 1671 - 1675
  • [50] Amber InGaN-based light-emitting diodes operable at high ambient temperatures
    Mukai, T
    Narimatsu, H
    Nakamura, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (5A): : L479 - L481
12345