共 50 条
- [42] INFLUENCE OF TYPE OF GROUP V DOPANT ON ANNEALING OF GAMMA-RADIATION DEFECTS IN GERMANIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (09): : 1229 - 1230
- [43] Effect of low dose γ-radiation on the annealing temperature of radiation defects in ion implanted MOS structures MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 95 (03): : 295 - 298
- [44] Neutron irradiation and annealing temperature effects of CZ- Silicon 2015 World Symposium on Mechatronics Engineering & Applied Physics (WSMEAP), 2015,
- [45] ROOM-TEMPERATURE ANNEALING EFFECTS ON RADIATION-INDUCED DEFECTS IN InP CRYSTALS AND SOLAR CELLS. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1986, 25 (11): : 1650 - 1656
- [46] ROOM-TEMPERATURE ANNEALING EFFECTS ON RADIATION-INDUCED DEFECTS IN INP CRYSTALS AND SOLAR-CELLS JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1986, 25 (11): : 1650 - 1656
- [50] HIGH-TEMPERATURE STAGES OF ANNEALING OF RADIATION DEFECTS IN REFRACTORY BCC METALS SOVIET ATOMIC ENERGY, 1975, 38 (02): : 101 - 104