Modeling of the nMOSFET I-V characteristics in relation with defects induced by the stress

被引：0

作者：

Bouhdada, A. ^{[1
]}

Marrach, R. ^{[1
]}

机构：

[1] Lab. of Mat. Phys. and Electron., Hassan II University, Faculty of Sciences Ain Chock, Km 8,El Jadida Road, BP 5366, Maarif, Casablanca, Morocco

来源：

Modelling, Measurement and Control A | 2002年 / 75卷 / 3-4期

关键词：

Computer simulation - Defects - Electric currents - Electric resistance - Hot carriers - Semiconductor device models - Stresses;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We propose a modeling of the I-V characteristics in relation with defect density generated by hot-carrier-injection during stress time. This defect density is simulated by a spatial and temporal gaussian distribution localized close to the drain-substrate junction. The gaussian parameters vary according to the stress time. The parasitic source and drain resistances are included. Simulation results show a significant degradation of the drain current versus stress time.

引用

页码：21 / 31

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