Modeling of the nMOSFET I-V characteristics in relation with defects induced by the stress

We propose a modeling of the I-V characteristics in relation with defect density generated by hot-carrier-injection during stress time. This defect density is simulated by a spatial and temporal gaussian distribution localized close to the drain-substrate junction. The gaussian parameters vary according to the stress time. The parasitic source and drain resistances are included. Simulation results show a significant degradation of the drain current versus stress time.