CHARACTERISTICS OF ISOTYPE n Ge-n GaAs HETEROJUNCTIONS.

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作者：
De Jaeger, J.C.
Salmer, G.
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来源：
IEE Proceedings I: Solid State and Electron Devices | 1980年 / 127卷 / 04期
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Compilation and indexing terms; Copyright 2025 Elsevier Inc;
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摘要：
SEMICONDUCTING GALLIUM ARSENIDE
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页码：207 / 211
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