It is demonstrated that two kindred effects, the magnetoconcentration effect and the magnetodiode effect, are differently influenced by the field effect. In the magnetoconcentration effect the field alters only the surface recombination velocity, whereas in the magnetodiode effect it governs the transverse distribution of the injection current, which is equivalent to controlling the distribution of nonequilibrium carrier generation within the semiconductor. The transverse distribution of the injected carriers is computed, and current-voltage characteristics of a field-effect magnetodiode are obtained for the case of constant surface recombination velocities.
