LOW THRESHOLD CURRENT HIGH OUTPUT POWER FUNDAMENTAL TRANSVERSE MODE 1. 3 mu M InGaAsP/InP BH LASER.

被引：0
|
作者：
Wang Wei [1 ]
Zhang Jingyuan [1 ]
Tian Huiliang [1 ]
Wang Xiaojie [1 ]
机构：
[1] Acad Sinica, China, Acad Sinica, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1986年 / 7卷 / 03期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
4
引用
收藏
页码：337 / 339
相关论文
共 50 条
  • [41] AGING TESTS OF LOW THRESHOLD CURRENT INGAASP/INP V-GROOVED SUBSTRATE BURIED HETEROSTRUCTURE LASERS EMITTING AT 1.3-MU-M WAVELENGTH
    IMAI, H
    ISHIKAWA, H
    HORI, K
    TAKAHEI, K
    APPLIED PHYSICS LETTERS, 1982, 41 (07) : 583 - 584
  • [42] 1. 3 mu m V-GROOVED SUBSTRATE BURIED CRESCENT InGaAsP/InP LASER BY ONE-STEP LIQUID PHASE EPITAXY.
    Sung, C.P.
    Chang, K.F.
    Kuo, J.Y.
    Wang, W.C.
    Chen, C.W.
    Chen, C.N.
    Sheu, T.C.
    MRL bulletin of research and development, 1988, 2 (01): : 1 - 5
  • [43] 1. 3 mu m InGaAsP MULTIQUANTUM-WELL SEMICONDUCTOR LASER FABRICATED BY LPE METHOD.
    Sasai, Yoichi
    Ogura, Mototsugu
    National technical report, 1986, 32 (02): : 255 - 261
  • [44] High output power operation of 1.3-mu m strained MQW lasers with low threshold currents at high temperature
    Kito, M
    Kimura, S
    Otsuka, N
    Fujihara, K
    Ishino, M
    Matsui, Y
    OPTICAL AND QUANTUM ELECTRONICS, 1996, 28 (05) : 503 - 511
  • [45] High power single-mode (λ=1.3-1.6 μm) laser diodes based on quantum well InGaAsP/InP heterostructures
    Leshko, AY
    Lyutetskii, AV
    Pikhtin, NA
    Slipchenko, SO
    Sokolova, ZN
    Fetisova, NV
    Golikova, EG
    Ryaboshtan, YA
    Tarasov, IS
    SEMICONDUCTORS, 2002, 36 (11) : 1308 - 1314
  • [46] High-output power and fundamental transverse mode InGaAs/GaAs strained-layer laser with ridge waveguide structure
    Takeshita, Tasuya, 1600, (30):
  • [47] LONG-LIFE GAAS-GAALAS TJS']JS LASER WITH LOW THRESHOLD CURRENT AND FUNDAMENTAL TRANSVERSE AND SINGLE LONGITUDINAL MODE
    NAMIZAKI, H
    ISHII, M
    KAN, H
    OHMURA, E
    HIRANO, R
    ITO, A
    OPTICS COMMUNICATIONS, 1976, 18 (01) : 39 - 40
  • [48] LOW-THRESHOLD, HIGH-POWER, 1.3-MU-M WAVELENGTH, INGAASP-INP ETCHED-FACET FOLDED-CAVITY SURFACE-EMITTING LASERS
    CHAO, CP
    GARBUZOV, DZ
    SHIAU, GJ
    FORREST, SR
    DIMARCO, LA
    HARVEY, MG
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (08) : 836 - 838
  • [49] NOVEL STRUCTURE GaInAsP/InP 1. 5-1. 6 mu m BUNDLE INTEGRATED-GUIDE (BIG) DISTRIBUTED BRAGG REFLECTOR LASER.
    Tohmori, Yuichi
    Jiang, Xiao
    Arai, Shigehisa
    Koyama, Fumio
    Suematsu, Yasuharu
    1600, (24):
  • [50] HIGH-POWER OUTPUT, LOW THRESHOLD, INNER STRIPE GAINASP LASER DIODE ON A P-TYPE INP SUBSTRATE
    IMANAKA, K
    HORIKAWA, H
    MATOBA, A
    KAWAI, Y
    SAKUTA, M
    APPLIED PHYSICS LETTERS, 1984, 45 (03) : 282 - 283
12345