Surface migration of ZnSe regrowth using compound source molecular beam epitaxy

被引：0
|
作者：
机构：
来源：
Appl Phys Lett | / 24卷 / 3428期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
下载
收藏
相关论文
共 50 条
  • [21] Molecular beam epitaxy of CdS ZnSe heterostructures
    Petillon, S
    Dinger, A
    Grün, M
    Hetterich, M
    Kazukauskas, V
    Klingshirn, C
    Liang, J
    Weise, B
    Wagner, V
    Geurts, J
    JOURNAL OF CRYSTAL GROWTH, 1999, 201 : 453 - 456
  • [22] Molecular beam epitaxy—Grown ZnSe nanowires
    S. K. Chan
    N. Liu
    Y. Cai
    N. Wang
    G. K. L. Wong
    I. K. Sou
    Journal of Electronic Materials, 2006, 35 : 1246 - 1250
  • [23] Migration Enhanced Epitaxy of InGaP on Offcut Ge (001) Using Solid-Source Molecular Beam Epitaxy
    Loke, Wan Khai
    Zhou, Qian
    Gong, Xiao
    Owen, Man Hon Samuel
    Wicaksono, Satrio
    Tan, Kian Hua
    Yeo, Yee-Chia
    Yoon, Soon Fatt
    2014 7TH INTERNATIONAL SILICON-GERMANIUM TECHNOLOGY AND DEVICE MEETING (ISTDM), 2014, : 75 - 76
  • [24] Molecular beam epitaxy of CdS/ZnSe heterostructures
    Petillon, S.
    Dinger, A.
    Grün, M.
    Hetterich, M.
    Kazukauskas, V.
    Klingshirn, C.
    Liang, J.
    Weise, B.
    Wagner, V.
    Geurts, J.
    Journal of Crystal Growth, 1999, 201 : 453 - 456
  • [25] Compound-source molecular beam epitaxy of GaN using GaN powder and ammonia as sources
    Sawada, M.
    Sawadaishi, M.
    Yamamoto, H.
    Arai, M.
    Honda, T.
    JOURNAL OF CRYSTAL GROWTH, 2007, 301 : 67 - 70
  • [26] Citric acid etching of ZnSe surface and application to the homoepitaxy by molecular beam epitaxy
    Wakao, K
    Nakamura, S
    Jia, AW
    Kobayashi, M
    Yoshikawa, A
    Shimotomai, M
    Kato, Y
    Takahashi, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (6B): : L749 - L751
  • [27] Doping of ZnSe during molecular-beam epitaxy using a high-efficiency source of active nitrogen
    Zhmerik, VN
    Ivanov, SV
    Maksimov, MV
    Kuznetsov, VM
    Ledentsov, NN
    Sorokin, SV
    Domrachev, SN
    Shmidt, NM
    Krestnikov, IL
    Kopev, PS
    SEMICONDUCTORS, 1996, 30 (06) : 568 - 574
  • [28] ELECTRON-BEAM SOURCE MOLECULAR-BEAM EPITAXY OF III-COMPOUND V-COMPOUND
    MALIK, RJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (03): : 722 - 724
  • [29] Gas source molecular beam epitaxy/migration enhanced epitaxy growth of InAs/AlSb superlattices
    Seta, Masumichi
    Asahi, Hajime
    Kim, Song Gang
    Asami, Kumiko
    Gonda, Shun-ichi
    Journal of Applied Physics, 1993, 74 (08):
  • [30] Spin dynamics of ZnSe-ZnTe nanostructures grown by migration enhanced molecular beam epitaxy
    Deligiannakis, Vasilios
    Dhomkar, Siddharth
    Ji, Haojie
    Pagliero, Daniela
    Kuskovsky, Igor L.
    Meriles, Carlos A.
    Tamargo, Maria C.
    JOURNAL OF APPLIED PHYSICS, 2017, 121 (11)
12345