MECHANISM OF LOW-TEMPERATURE CAPTURE OF A DEFECTION BY AN ATTRACTIVE CENTER IN A CRYSTAL.

被引：0
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作者：
Klinger, M.I.
机构：
来源：
Soviet physics. Semiconductors | 1980年 / 14卷 / 05期
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Compendex;
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摘要：
SEMICONDUCTOR MATERIALS
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页码：567 / 570
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