Rapid thermal annealing of SiO2 for VLSI applications

被引：0
|
作者：
机构：
来源：
J Non Cryst Solids | / 35期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] Insights into effects of thermal annealing on optical properties of SiO2 films
    Jiang, Yugang
    Ji, Yiqin
    Liu, Huasong
    Liu, Dandan
    Wang, Lishuan
    Jiang, Chenghui
    Yang, Yaping
    Chen, Deying
    6TH INTERNATIONAL SYMPOSIUM ON ADVANCED OPTICAL MANUFACTURING AND TESTING TECHNOLOGIES: ADVANCED OPTICAL MANUFACTURING TECHNOLOGIES, 2012, 8416
  • [42] DEFECT FORMATION IN THERMAL SIO2 BY HIGH-TEMPERATURE ANNEALING
    HOFMANN, K
    RUBLOFF, GW
    MCCORKLE, RA
    APPLIED PHYSICS LETTERS, 1986, 49 (22) : 1525 - 1527
  • [43] Effects of rapid thermal annealing time and ambient temperature on the charge storage capability of SiO2/pure Ge/rapid thermal oxide memory structure
    Heng, CL
    Teo, LW
    Ho, V
    Tay, MS
    Lei, Y
    Choi, WK
    Chim, WK
    MICROELECTRONIC ENGINEERING, 2003, 66 (1-4) : 218 - 223
  • [44] RAPID THERMAL NITRIDATION OF SIO2 FOR NITROXIDE THIN DIELECTRICS
    MOSLEHI, MM
    SARASWAT, KC
    SHATAS, SC
    APPLIED PHYSICS LETTERS, 1985, 47 (10) : 1113 - 1115
  • [45] Growth of thin SiO2 by "spike" rapid thermal oxidation
    Fiory, AT
    ULTRATHIN SIO2 AND HIGH-K MATERIALS FOR ULSI GATE DIELECTRICS, 1999, 567 : 13 - 19
  • [46] Formation of High-Quality SiO2 and SiO2/Si Interface by Thermal-Plasma-Jet-Induced Millisecond Annealing and Postmetallization Annealing
    Hiroshige, Yasuo
    Higashi, Seiichiro
    Matsumoto, Kazuya
    Miyazaki, Seiichi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (08)
  • [47] NITROGEN INCORPORATION IN SIO2 BY RAPID THERMAL-PROCESSING OF SILICON AND SIO2 IN N2O
    WEIDNER, G
    KRUGER, D
    APPLIED PHYSICS LETTERS, 1993, 62 (03) : 294 - 296
  • [48] Effects of rapid thermal annealing on the morphology and optical property of ultrathin InSb film deposited on SiO2/Si substrate
    Li Deng-Yue
    Li Hong-Tao
    Sun He-Hui
    Zhao Lian-Cheng
    CHINESE PHYSICS B, 2013, 22 (02)
  • [49] Effects of rapid thermal annealing on the morphology and optical property of ultrathin InSb film deposited on SiO2/Si substrate
    李邓玥
    李洪涛
    孙合辉
    赵连城
    Chinese Physics B, 2013, 22 (02) : 503 - 506
  • [50] Blue-shift emission in InP-based quantum dots by SiO2 sputtering and rapid thermal annealing
    Hsu, T. C.
    Tzeng, T. E.
    Lin, E. Y.
    Chuang, K. Y.
    Chiu, C. L.
    Lay, T. S.
    JOURNAL OF CRYSTAL GROWTH, 2009, 311 (07) : 1787 - 1790
12345