Vibrational properties of a-Si:H films containing voids: experiment and modeling

被引:0
|
作者
Barriquand, N. [1 ]
Paillard, V. [1 ]
Rocai Cabarrocas, P. [1 ]
Landa, G. [1 ]
Djafari-Rouhani, M. [1 ]
机构
[1] Laboratoire de Physique des Solides, Universiteá Paul Sabatier, 118 route de Narbonne, 31062 Toulouse cedex-4, France
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:451 / 455
相关论文
共 50 条
  • [1] Vibrational properties of a-Si:H films containing voids:: Experiment and modeling
    Barriquand, N
    Paillard, V
    Cabarrocas, PRI
    Landa, G
    Djafari-Rouhani, M
    AMORPHOUS AND HETEROGENEOUS SILICON THIN FILMS: FUNDAMENTALS TO DEVICES-1999, 1999, 557 : 451 - 455
  • [2] Vibrational and electronic properties of a-Si: (H, N) alloys
    Lin, Shu-Ya
    Proceedings of the National Science Council, Republic of China, Part A: Physical Science and Engineering, 1994, 18 (01): : 45 - 54
  • [3] Computational generation of voids in a-Si and a-Si:H by cavitation at low density
    Guerrero, Enrique
    Strubbe, David A.
    PHYSICAL REVIEW MATERIALS, 2020, 4 (02)
  • [4] EFFECT OF PLASMA PARAMETERS ON THE PROPERTIES OF HYDROGEN IN a-Si:H FILMS AND RELEASE MECHANISM OF HYDROGEN IN a-Si:H FILMS.
    Wang Cheng
    He Kelun
    Cheng Ruguang
    Qi Mingwei
    Hongwai Yanjiu/Chinese Journal of Infrared Research, 1985, 4 (06): : 413 - 420
  • [5] Transport properties of structures containing a-Si: H: Er
    Dimova-Malinovska, D
    Sendova-Vassileva, M
    Northcott, R
    Marshall, JM
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2003, 14 (10-12) : 745 - 746
  • [6] Transport properties of structures containing a-Si : H : Er
    D. Dimova-Malinovska
    M. Sendova-Vassileva
    R. Northcott
    J. M. Marshall
    Journal of Materials Science: Materials in Electronics, 2003, 14 : 745 - 746
  • [7] Silicon network in a-Si:H films containing ordered inclusions
    Golikova, OA
    Bogdanova, EV
    Kazanin, MM
    Kuznetsov, AN
    Terekhov, VA
    Kashkarov, VM
    Ostapenko, OV
    SEMICONDUCTORS, 2001, 35 (05) : 579 - 582
  • [8] Silicon network in a-Si:H films containing ordered inclusions
    O. A. Golikova
    E. V. Bogdanova
    M. M. Kazanin
    A. N. Kuznetsov
    V. A. Terekhov
    V. M. Kashkarov
    O. V. Ostapenko
    Semiconductors, 2001, 35 : 579 - 582
  • [9] Role of ion bombardment on the properties of a-Si:H films
    Aguas, H
    Martins, R
    Fortunato, E
    VACUUM, 2001, 60 (1-2) : 247 - 254