Reduction of Schottky reverse leakage current using GaAs surface cleaning with UVO3 treatment

被引：0
|
作者：
Tanimoto, Takuma [1 ]
Ohbu, Isao [1 ]
Ohta, Hiroshi [1 ]
Takatani, Shinichiro [1 ]
机构：
[1] Hitachi, Ltd, Tokyo, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1999年 / 38卷 / 7 A期
关键词：
Chemical vapor deposition - Current voltage characteristics - Electric resistance - Ellipsometry - Field effect transistors - Leakage currents - Oxidation - Oxides - Photoelectron spectroscopy - Semiconducting gallium arsenide - X ray photoelectron spectroscopy;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A GaAs surface-cleaning method using UVO3 treatment was developed. The UVO3 treatment involves two processes: GaAs surface oxidation and oxide removal. Surface oxidation is performed by using a mercury lamp at high temperature, such as 180°C. GaAs oxide is removed by NH4OH solution dipping. Spectroscopic ellipsometry and X-ray photoelectron spectroscopy (XPS) study showed that thermally unstable As oxides exist on a non-treated surface; however, surface GaAs oxides are almost completely removed by this treatment. This cleaning method was applied in the field effect transistor (FET)-gate-formation process and, consequently, Schottky leakage current was significantly reduced.
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页码：3982 / 3985
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