Improving performance with oxynitride gate dielectrics

被引：0
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作者：
Leonarduzzi, Gianni D. [1 ]
Kwong, Dim-Lee [1 ]
机构：
[1] Scott Speciality Gases Inc, Austin, United States
来源：
Semiconductor International | 1998年 / 21卷 / 08期
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页码：225 / 226
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