Admittance properties of thin/thick metal-oxide-semiconductor structures. I. Experiment and equivalent network

被引：0
|
作者：
机构：
来源：
| 1600年 / 71期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] ADMITTANCE PROPERTIES OF THIN THICK METAL-OXIDE-SEMICONDUCTOR STRUCTURES .1. EXPERIMENT AND EQUIVALENT NETWORK
    FAHRNER, WR
    BRAUNIG, D
    OSTROP, P
    RUHL, S
    JOURNAL OF APPLIED PHYSICS, 1992, 71 (07) : 3381 - 3387
  • [2] ADMITTANCE PROPERTIES OF THIN THICK METAL-OXIDE-SEMICONDUCTOR STRUCTURES .2. EXACT MODELING BY 2-DIMENSIONAL SIMULATION
    WACHUTKA, G
    FAHRNER, WR
    JOURNAL OF APPLIED PHYSICS, 1992, 71 (07) : 3388 - 3393
  • [3] GAS-SENSITIVE METAL-OXIDE-SEMICONDUCTOR STRUCTURES.
    Kuliyev, B.B.
    Aliyev, F.G.
    Kasumov, S.I.
    Safarov, D.M.
    Soviet journal of communications technology & electronics, 1986, 31 (03): : 180 - 183
  • [4] INVESTIGATION OF SURFACE STATES IN TELLURIUM METAL-OXIDE-SEMICONDUCTOR STRUCTURES.
    Berezovets, V.A.
    Galetskaya, A.D.
    Ivanov, Yu.L.
    Seisyan, E.L.
    Tkachenko, A.Yu.
    Farbshtein, I.I.
    Soviet physics. Semiconductors, 1980, 14 (07): : 793 - 797
  • [5] HYDROGEN INDUCED DRIFT IN PALLADIUM GATE METAL-OXIDE-SEMICONDUCTOR STRUCTURES.
    Nylander, Claes
    Armgarth, Marten
    Svensson, Christer
    Journal of Applied Physics, 1984, 56 (04): : 1177 - 1188
  • [6] DYNAMIC VOLT-CAPACITANCE CHARACTERISTIC MEASUREMENT IN METAL-OXIDE-SEMICONDUCTOR STRUCTURES.
    Samokhvalov, M.K.
    Novichkov, V.V.
    Sverdlova, A.M.
    Instruments and Experimental Techniques (English Translation of Pribory I Tekhnika Eksperimenta), 1977, 20 (2 pt 2): : 559 - 561
  • [7] EQUILIBRIUM PROPERTIES OF THIN-OXIDE METAL-OXIDE-SEMICONDUCTOR DIODES
    BUTLER, MA
    SEAGER, CH
    JOURNAL OF APPLIED PHYSICS, 1986, 60 (06) : 2137 - 2141
  • [8] Electrical properties of MgO/GaN metal-oxide-semiconductor structures
    Ogidi-Ekoko, Onoriode N.
    Goodrich, Justin C.
    Howzen, Alexandra J.
    Peart, Matthew R.
    Strandwitz, Nicholas C.
    Wierer, Jonathan J., Jr.
    Tansu, Nelson
    SOLID-STATE ELECTRONICS, 2020, 172 (172)
  • [9] Parameters affecting the accuracy of oxide thickness prediction in thin metal-oxide-semiconductor structures
    Mohaidat, JM
    Ahmad-Bitar, RN
    SUPERLATTICES AND MICROSTRUCTURES, 2004, 35 (1-2) : 85 - 94
  • [10] INFLUENCE OF ELECTRON IRRADIATION ON THE HALL MOBILITY OF HOLES IN INVERSION LAYERS OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES.
    Guzev, A.A.
    Gurtov, V.A.
    Rzhanov, A.V.
    Frantsuzov, A.A.
    Soviet physics. Semiconductors, 1980, 14 (04): : 451 - 454
12345