INFLUENCE OF ELECTRON IRRADIATION ON THE HALL MOBILITY OF HOLES IN INVERSION LAYERS OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES.

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Guzev, A.A.
Gurtov, V.A.
Rzhanov, A.V.
Frantsuzov, A.A.
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Soviet physics. Semiconductors | 1980年 / 14卷 / 04期
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A study was made of the influence of irradiation with fast (E equals 3. 5 MeV) electrons on the Hall mobility of holes mu //H in structures with different thicknesses of the oxide layer under the gate electrode. The model of fluctuations of the surface potential was used to interpret the experimental results. The observed reduction in carrier mobility in the channel after irradiation could be explained, for all the oxide thicknesses, by an increase in fluctuations of the potential in the course of accumulation of a radiation-induced charge in the oxide.
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页码：451 / 454
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