POWER TAKEOFF ANALYSIS FOR DIAGONALLY CONNECTED MHD CHANNELS.

被引：0
|
作者：
Pan, Yen Cheng
Doss, Ezzat D.
机构：
来源：
Journal of energy | 1980年 / 4卷 / 06期
关键词：
D O I：
10.2514/3.62482
中图分类号：
O441 [电磁学]; TM12 [];
学科分类号：
0809 ;
摘要：
The electrical loading of the power takeoff region of diagonally connected MHD channels is investigated. The study examines the loading schemes consisting of diodes and resistors. The model is applicable for the following four cases: 1) connection with diodes only, 2) connection with diodes and equal resistors, 3) connection with diodes and unequal resistors to obtain a given current distribution, and 4) connection with diodes and unequal resistors under changing load. The analysis is applicable for the power takeoff regions of single- or multiple-output systems. The general behavior of the current and the potential distributions in all four cases are discussed.
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页码：252 / 259
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