Smoothing of the Si surface using CF4/O2 down-flow etching

被引：0
|
作者：
Nishino, H.
Hayasaka, N.
Horioka, K.
Shiozawa, J.
Nadahara, S.
Shooda, N.
Akama, Y.
Sakai, A.
Okano, H.
机构：
来源：
Journal of Applied Physics | 1993年 / 74卷 / 02期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] SMOOTHING OF THE SI SURFACE USING CF4/O2 DOWN-FLOW ETCHING
    NISHINO, H
    HAYASAKA, N
    HORIOKA, K
    SHIOZAWA, J
    NADAHARA, S
    SHOODA, N
    AKAMA, Y
    SAKAI, A
    OKANO, H
    JOURNAL OF APPLIED PHYSICS, 1993, 74 (02) : 1349 - 1353
  • [2] Enhancement of etch rate by the addition of O2 and Ar in chemical dry etching of Si using a discharge flow of Ar/CF4 and CF4/O2 gas mixtures
    Tsuji, M
    Okano, S
    Tanaka, A
    Nishimura, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2001, 40 (4A): : 2440 - 2446
  • [3] SURFACE PROCESSES IN CF4/O2 REACTIVE ETCHING OF SILICON
    OEHRLEIN, GS
    ROBEY, SW
    LINDSTROM, JL
    APPLIED PHYSICS LETTERS, 1988, 52 (14) : 1170 - 1172
  • [4] NEGATIVE AND POSITIVE-IONS FROM CF4 AND CF4/O2 RF DISCHARGES IN ETCHING SI
    LIN, Y
    OVERZET, LJ
    APPLIED PHYSICS LETTERS, 1993, 62 (07) : 675 - 677
  • [5] MODELING OF SILICON ETCHING IN CF4/O2 AND CF4/H2 PLASMAS
    VENKATESAN, SP
    TRACHTENBERG, I
    EDGAR, TF
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (07) : 2280 - 2290
  • [6] Enhancement of etch rate by the addition of O2 and Ar in chemical dry etching of Si using a discharge flow of Ar/CF4 and CF4/O4 gas mixtures
    Tsuji, M.
    Okano, S.
    Tanaka, A.
    Nishimura, Y.
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2001, 40 (4 A): : 2440 - 2446
  • [7] Etching of PES fabric by O2/CF4 plasma
    Aubrecht, L.
    Pichal, J.
    Spatenka, P.
    Vatuna, T.
    Martinkova, L.
    CZECHOSLOVAK JOURNAL OF PHYSICS, 2006, 56 : B1126 - B1131
  • [8] POLYIMIDE ETCHING IN O2/CF4 RF PLASMAS
    YOGI, T
    SAENGER, K
    PURUSHOTHAMAN, S
    SUN, CP
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (11) : C471 - C471
  • [9] Reactive ion etching of selected polymers in O2 and in CF4/O2
    Hand, B., 1600, (47):
  • [10] MASS-SPECTROMETRIC TRANSIENT STUDY OF DC PLASMA-ETCHING OF SI IN CF4 AND CF4/O2 MIXTURES
    BRANDT, WW
    HONDA, T
    JOURNAL OF APPLIED PHYSICS, 1985, 57 (01) : 119 - 122
12345