Transient response of high-speed p-i-n photodiodes including diffusion effects

被引:0
|
作者
George, G. [1 ]
Krusius, J.P. [1 ]
机构
[1] Cornell Univ, Ithaca, United States
来源
Solid-State Electronics | 1994年 / 37卷 / 11期
关键词
Diffusion effects - High speed pin photodiodes - Homojunction - Photogeneration - Responsivity - Transient response;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:1841 / 1847
相关论文
共 50 条
  • [21] Frequency Response Performance Analysis of p-i-n Photodiodes
    Torres Pereira, Jorge Manuel
    COMPUTER FIELD MODELS OF ELECTROMAGNETIC DEVICES, 2010, 34 : 851 - 860
  • [22] Extraction of intrinsic frequency response of p-i-n photodiodes
    Huang, HP
    Zhu, NH
    Liu, J
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2005, 17 (10) : 2155 - 2157
  • [23] Diffusion of phosphorus in technology for manufacturing silicon p-i-n photodiodes
    Kukurudziak, M.S.
    Semiconductor Physics, Quantum Electronics and Optoelectronics, 2022, 25 (04): : 385 - 393
  • [24] Diffusion of phosphorus in technology for manufacturing silicon p-i-n photodiodes
    Kukurudziak, M. S.
    SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS, 2022, 25 (04) : 385 - 393
  • [25] Effects of radiation damage in silicon p-i-n photodiodes
    McPherson, M
    Jones, BK
    Sloan, T
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1997, 12 (10) : 1187 - 1194
  • [26] High-Speed InP-Based p-i-n Photodiodes With InGaAs/GaAsSb Type-II Quantum Wells
    Tossoun, Bassem
    Stephens, Robert, Jr.
    Wang, Ye
    Addamane, Sadhvikas
    Balakrishnan, Ganesh
    Holmes, Archie, Jr.
    Beling, Andreas
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2018, 30 (04) : 399 - 402
  • [27] Numerical Drift-Diffusion Simulation of GaAs p-i-n and Schottky-Barrier Photodiodes for High-Speed AIIIBV On-Chip Optical Interconnections
    Pisarenko, Ivan
    Ryndin, Eugeny
    ELECTRONICS, 2016, 5 (03)
  • [28] Mixed device/circuit model of the high-speed p-i-n photodiode
    Malyshev, SA
    Chizh, AL
    Vasileuski, YG
    NUSOD '05: PROCEEDINGS OF THE 5TH INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATIONS OF OPTOELECTRONIC DEVICES, 2004, : 45 - 46
  • [29] Cryogenic performance of a high-speed GaInAs/InP p-i-n photodiode
    Zhang, YM
    Borzenets, V
    Dubash, N
    Reynolds, T
    Wey, YG
    Bowers, J
    JOURNAL OF LIGHTWAVE TECHNOLOGY, 1997, 15 (03) : 529 - 533
  • [30] Characterization of THz emitter based on a high-speed p-i-n photodiode
    Schoenherr, D.
    Sydlo, C.
    Goebel, T.
    Feiginov, A.
    Hartnagel, H. L.
    Meissner, P.
    Bach, H. -G.
    Kunkel, R.
    Mekonnen, G. G.
    Zhang, R.
    2007 JOINT 32ND INTERNATIONAL CONFERENCE ON INFRARED AND MILLIMETER WAVES AND 15TH INTERNATIONAL CONFERENCE ON TERAHERTZ ELECTRONICS, VOLS 1 AND 2, 2007, : 981 - +