EXTENDED-DEFECT REDUCTION BY UNIFORM HEATING FOR P + -IMPLANTED Si WAFERS.

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作者：
Komatsu, Ryosaku [1 ]
Kajiyama, Kenji [1 ]
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[1] Electrical Communication Laboratories, Nippon Telegraph and Telephone, Atsugi, Kanagawa 243-01, Japan
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| 1600年 / 54期
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