MINORITY CARRIER LIFETIME MAPPING ON N-TYPE CADMIUM MERCURY TELLURIDE.

被引：0
|
作者：
Pratt, R.G.
Hewett, J.
机构：
来源：
Annual Review - Philips Research Laboratories | 1982年
关键词：
Compendex;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
INFRARED DETECTORS
引用
收藏
相关论文
共 50 条
  • [31] THERMAL-NEUTRON-INDUCED RECOIL IN N-TYPE CADMIUM TELLURIDE
    BARNES, C
    KIKUCHI, C
    TRANSACTIONS OF THE AMERICAN NUCLEAR SOCIETY, 1967, 10 (01): : 115 - &
  • [32] OHMIC CONTACTS TO P-TYPE CADMIUM TELLURIDE AND CADMIUM MERCURY TELLURIDE
    JANIK, E
    TRIBOULET, R
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1983, 16 (12) : 2333 - 2340
  • [33] Observation of an anomalous minority carrier trap in n-type InGaAs
    Gfroerer, TH
    Simov, KR
    Wanlass, MW
    2005 International Conference on Indium Phosphide and Related Materials, 2005, : 657 - 659
  • [34] MINORITY-CARRIER TRANSPORT PARAMETERS IN N-TYPE SILICON
    WANG, CH
    MISIAKOS, K
    NEUGROSCHEL, A
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (05) : 1314 - 1322
  • [35] MINORITY-CARRIER INJECTION AND EXTRACTION IN N-TYPE GERMANIUM
    RIEDER, G
    HENISCH, HK
    RAHIMI, S
    MANIFACIER, JC
    PHYSICAL REVIEW B, 1980, 21 (02): : 723 - 729
  • [36] Millisecond minority carrier lifetimes in n-type multicrystalline silicon
    Cuevas, A
    Kerr, MJ
    Samundsett, C
    Ferrazza, F
    Coletti, G
    APPLIED PHYSICS LETTERS, 2002, 81 (26) : 4952 - 4954
  • [37] On the impact of metal impurities on the carrier lifetime in n-type germanium
    Gaubas, Eugenijus
    Vanhellemont, Jan
    Simoen, Eddy
    Theuwis, Antoon
    Clauws, Paul
    SEMICONDUCTOR DEFECT ENGINEERING-MATERIALS, SYNTHETIC STRUCTURES AND DEVICES II, 2007, 994 : 263 - +
  • [38] MINORITY-CARRIER LIFETIME MAPPING IN THE SEM
    STECKENBORN, A
    JOURNAL OF MICROSCOPY-OXFORD, 1980, 118 (MAR): : 297 - 302
  • [39] The minority carrier lifetime of n-type 4H- and 6H-SiC epitaxial layers
    Kordina, O
    Bergman, JP
    Hallin, C
    Janzen, E
    APPLIED PHYSICS LETTERS, 1996, 69 (05) : 679 - 681
  • [40] MINORITY-CARRIER LIFETIME IN DOPED AND UNDOPED EPITAXIALLY GROWN N-TYPE CDXHG1-XTE
    BARTON, S
    DUTTON, D
    CAPPER, P
    JONES, CL
    METCALFE, N
    JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (11) : 1759 - 1764
12345