Thermal Properties of High-Power InGaAs/AlGaAs Laser Diodes

被引：0
|
作者：
机构：
来源：
J Appl Spectrosc | / 5卷 / 900期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] Experimental results of aging and thermal effects in high-power laser diodes
    Rupert, J.W.
    Landry, M.J.
    Mittas, A.
    Woolston, T.L.
    Proceedings of the International Conference on Lasers, 1990,
  • [42] Optimization of Cavity Parameters of High-Power InGaAs/AlGaAs/GaAs Laser Diodes (λ = 1060 nm) for Efficient Operation at Ultrahigh Pulsed Pump Currents
    S. O. Slipchenko
    O. S. Soboleva
    V. S. Golovin
    N. A. Pikhtin
    Bulletin of the Lebedev Physics Institute, 2023, 50 : S535 - S546
  • [43] High power, kink-free 970 nm InGaAs/AlGaAs laser diodes with asymmetric structure
    Buda, M
    Fu, L
    Hay, J
    Tan, HH
    Jagadish, C
    COMMAD 2000 PROCEEDINGS, 2000, : 149 - 152
  • [44] SIMPLE RELIABLE PROCESSING TECHNIQUE FOR LOW-THRESHOLD HIGH-POWER STRAINED INGAAS-ALGAAS GRINSCH SQW LASER-DIODES
    VERMAERKE, F
    MOERMAN, I
    VERMEIRE, G
    BUYDENS, L
    VANDAELE, P
    DEMEESTER, P
    IEE PROCEEDINGS-J OPTOELECTRONICS, 1993, 140 (01): : 75 - 79
  • [45] Optimization of Cavity Parameters of High-Power InGaAs/AlGaAs/GaAs Laser Diodes (λ=1060 nm) for Efficient Operation at Ultrahigh Pulsed Pump Currents
    Slipchenko, S. O.
    Soboleva, O. S.
    Golovin, V. S.
    Pikhtin, N. A.
    BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE, 2023, 50 (SUPPL 5) : S535 - S546
  • [46] HIGH-POWER MULTIPLE-EMITTER ALGAAS SUPERLUMINESCENT DIODES
    PAOLI, TL
    THORNTON, RL
    BURNHAM, RD
    SMITH, DL
    APPLIED PHYSICS LETTERS, 1985, 47 (05) : 450 - 452
  • [47] High-power 2.5-W cw laser diodes manufactured in the AlGaAs/GaAs system
    Aluev, A.V.
    Morozyuk, A.M.
    Kobyakova, M.Sh.
    Chel'nyj, A.A.
    Kvantovaya Elektronika, 2001, 31 (07): : 627 - 629
  • [48] Microphotoluminescence mapping of packaging-induced stress distribution in high-power AlGaAs laser diodes
    Martin, E
    Landesman, JP
    Hirtz, JP
    Fily, A
    APPLIED PHYSICS LETTERS, 1999, 75 (17) : 2521 - 2523
  • [49] A DEGRADATION RATE STUDY OF MBE-GROWN HIGH-POWER ALGAAS LASER-DIODES
    CHALY, VP
    ETINBERG, MI
    FOKIN, GA
    KARPOV, SY
    MYACHIN, VE
    OSTROVSKY, AY
    POGORELSKY, YV
    RUSANOVICH, IY
    SOKOLOV, IA
    SHCURKO, AP
    STRUGOV, NA
    TERMARTIROSYAN, AL
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (04) : 345 - 348
  • [50] Leaky wave in high-power AlGaAs/InGaAs/GaAs semiconductor lasers
    Bobretsova, Yu K.
    Veselov, D. A.
    Klimov, A. A.
    Kryuchkov, V. A.
    Shashkin, I. S.
    Slipchenko, S. O.
    Pikhtin, N. A.
    QUANTUM ELECTRONICS, 2020, 50 (08) : 722 - 726
12345