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- [41] Formation of acceptor centers under the action of redox media on the surface of CdxHg1 − xTe films Semiconductors, 2009, 43 : 1641 - 1646
- [42] Investigation of surface potential in the V-defect region of MBE CdxHg1 − xTe film Semiconductors, 2015, 49 : 309 - 312
- [43] The investigation of structural perfection of CdxHg1−xTe/CdZnTe epitaxial layers by the Raman scattering method Semiconductors, 2004, 38 : 82 - 90
- [44] Effect of excitation intensity and electric field on the photoconductivity relaxation in CdxHg1−xTe/GaAs polycrystalline layers Physics of the Solid State, 2000, 42 : 1222 - 1227
- [45] GENERATION OF STIMULATED RADIATION AND THE HIGH-TEMPERATURE PHOTOLUMINESCENCE IN CdxHg1 - xTe LAYERS. Physica Status Solidi (B) Basic Research, 1985, 130 (01):
- [46] COMPOSITION OF THE GASEOUS PHASE IN THE CdxHg1 - xTe minus NH4I SYSTEM. Neorganiceskie materialy, 1987, 23 (05): : 762 - 767
- [48] Mercury vacancies as divalent acceptors in HgyTe1 – y/CdxHg1 – xTe structures with quantum wells Semiconductors, 2016, 50 : 1662 - 1668
- [49] Determining the Compositional Profile of HgTe/CdxHg1 – xTe Quantum Wells by Single-Wavelength Ellipsometry Optics and Spectroscopy, 2019, 127 : 340 - 346
- [50] Stimulated and spontaneous emission of CdxHg1−xTe structures in the range 3.2–3.7 µm at 77 K Semiconductors, 2004, 38 : 1374 - 1377