Microwave resonator method of measurement of the semiconductor n-n+ structure parameters

被引：0
|
作者：
Borodovskij, P.A. [1 ]
Utkin, K.K. [1 ]
机构：
[1] Inst Fiziki Poluprovodnikov SO RAN, Novosibirsk, Russia
来源：
Pribory i Tekhnika Eksperimenta | 1994年 / 03期
关键词：
713.5 Other Electronic Circuits - 715.1 Electronic Equipment; non-communication;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
4
引用
收藏
页码：137 / 141
相关论文
共 50 条
  • [31] THICKNESS MEASUREMENT FOR EPITAXIAL-FILMS OF N-N+ AND P-P+ SILICON STRUCTURES USING DOUBLE-BEAM REFLECTION PHASE SPECTRUM
    KISELEV, BA
    KOPYLOV, AA
    LEZHNEV, VV
    ROMANOV, AM
    OPTIKA I SPEKTROSKOPIYA, 1987, 63 (01): : 118 - 122
  • [32] A permittivity measurement method based on back propagation neural network by microwave resonator
    Hao H.-G.
    Wang D.-X.
    Wang Z.
    Progress In Electromagnetics Research C, 2021, 110 : 27 - 38
  • [33] The microwave measurement of the dielectric properties by the parallel plate resonator and ceramic cavity method
    Yoon, JR
    Kwon, JY
    Lee, HY
    PROCEEDINGS OF THE 5TH INTERNATIONAL CONFERENCE ON PROPERTIES AND APPLICATIONS OF DIELECTRIC MATERIALS, VOLS 1 AND 2, 1997, : 964 - 968
  • [34] Microwave resonator method of dynamic measurement of mass of the samples of gasifying solid fuel
    Perov, Victor V.
    Zarko, Vladimir. E.
    THERMOPHYSICAL BASIS OF ENERGY TECHNOLOGIES (TBET-2016), 2016, 92
  • [35] Application of a Microwave Coaxial Bragg Structure for the Measurement of Parameters of Insulators
    D. A. Usanov
    S. A. Nikitov
    A. V. Skripal’
    D. V. Ponomarev
    O. M. Ruzanov
    I. O. Timofeev
    Journal of Communications Technology and Electronics, 2020, 65 : 541 - 548
  • [36] Application of a Microwave Coaxial Bragg Structure for the Measurement of Parameters of Insulators
    Usanov, D. A.
    Nikitov, S. A.
    Skripal', A. V.
    Ponomarev, D. V.
    Ruzanov, O. M.
    Timofeev, I. O.
    JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS, 2020, 65 (05) : 541 - 548
  • [37] A new noise measurement method of noise parameters at microwave frequencies
    Bareau, P
    Abdipour, A
    Pacaud, A
    IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 1997, 46 (04) : 1044 - 1048
  • [38] USE OF N-INAS IN DEVELOPMENT OF SEMICONDUCTOR NONRECIPROCAL MICROWAVE DEVICES
    USANOV, DA
    KABANOV, LN
    RADIOTEKHNIKA I ELEKTRONIKA, 1974, 19 (02): : 452 - 454
  • [39] New noise measurement method of noise parameters at microwave frequencies
    Ecole Superieure d'Eelectricite, Gif sur Yvette, France
    IEEE Trans Instrum Meas, 4 (1044-1048):
  • [40] INFLUENCE OF TRAPPING CENTERS ON CURRENT CHARACTERISTICS OF A SEMICONDUCTOR P-N-N+ STRUCTURE
    LEIDERMAN, AY
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (10): : 1251 - +
12345