共 50 条
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- [6] Characterization of 248nm Deep Ultraviolet (DUV) Photoresist after Ion Implantation CLEANING AND SURFACE CONDITIONING TECHNOLOGY IN SEMICONDUCTOR DEVICE MANUFACTURING 11, 2009, 25 (05): : 187 - 194
- [7] 248nm Process Is Capable for sub 0.09 um Groundrules? CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2011 (CSTIC 2011), 2011, 34 (01): : 277 - 284
- [8] Lithography trends for sub-0.1μm technologies 2001 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOL 1 & 2, PROCEEDINGS, 2001, : 439 - 440
- [9] CVD photoresist performance for 248 nm lithography MICROLITHOGRAPHY 1999: ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVI, PTS 1 AND 2, 1999, 3678 : 766 - 776
- [10] SOI devices for sub-0.1 μm gate lengths 2002 23RD INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS, 2002, : 109 - 113