Millimeter-wave three-port transistor drain mixer

被引：0
|
作者：
Xu, R.M. [1 ]
Xiao, S.Q. [1 ]
Yan, B. [1 ]
Xue, L.J. [1 ]
机构：
[1] Inst. of Appl. Physics, Univ. of Electron. Sci. and Technol., Chengdu 610054, China
来源：
Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves | 2001年 / 20卷 / 02期
关键词：
Equivalent circuits;
D O I：
暂无
中图分类号：
TN7 [基本电子电路];
学科分类号：
080902 ;
摘要：
The analysis and optimizing optimizing design for three-port device drain mixer in Ka-band were given. The nonlinear equivalent circuit and its parameters were simulated and obtained from the small signal S parameter and the DC measurements of three-port device. And then, the drain mixer circuit was designed with optimum conversion gain of the drain mixer, which was derived from the harmonic balance method and the conversion matrices method. The test result shows that the mixer has conversion gain of 4 dB at RF 27.4 GHz and LO 33.4 GHz/10 dBm.
引用
收藏
页码：120 / 122
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