I-V characteristics of electron-cyclotron-resonance plasma-enhanced chemical-vapor-deposition silicon nitride thin films

被引:0
|
作者
Jeon, Yoo-Chan
Lee, Ho-Young
Joo, Seung-Ki
机构
来源
| 1600年 / 75期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [41] Wet etching studies of silicon nitride thin films deposited by electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition
    Sundaram, KB
    Sah, RE
    Baumann, H
    Balachandran, K
    Todi, RM
    MICROELECTRONIC ENGINEERING, 2003, 70 (01) : 109 - 114
  • [42] Preparation of amorphous fluoride films by electron cyclotron resonance plasma-enhanced chemical vapor deposition
    Shojiya, M
    Takahashi, S
    Teramoto, M
    Konishi, A
    Kawamoto, Y
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2001, 284 (1-3) : 153 - 159
  • [43] THE GROWTH OF SILICON-NITRIDE CRYSTALLINE FILMS USING MICROWAVE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION
    GRANNEN, KJ
    XIONG, F
    CHANG, RPH
    JOURNAL OF MATERIALS RESEARCH, 1994, 9 (09) : 2341 - 2348
  • [44] Mechanical and optical properties of amorphous silicon nitride-based films prepared by electron cyclotron resonance plasma-enhanced chemical vapor deposition
    Ahammou, Brahim
    Bhattacharyya, Paramita
    Levallois, Christophe
    Azmi, Fahmida
    Landesman, Jean-Pierre
    Mascher, Peter
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2023, 41 (05):
  • [45] BONDED HYDROGEN IN SILICON-NITRIDE FILMS DEPOSITED BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION
    ALEXANDROV, SE
    HITCHMAN, ML
    SHAMLIAN, SH
    JOURNAL OF MATERIALS CHEMISTRY, 1994, 4 (12) : 1843 - 1847
  • [46] PREPARATION OF GROUP 13 AND 14 NITRIDE THIN-FILMS BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION
    HOFFMAN, DM
    RANGARAJAN, SP
    ATHAVALE, SD
    ECONOMOU, DJ
    LIU, JR
    ZHENG, ZH
    CHU, WK
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1995, 209 : 186 - INOR
  • [47] ELLIPSOMETRY STUDY OF THE NUCLEATION OF SI EPITAXY BY ELECTRON-CYCLOTRON-RESONANCE PLASMA CHEMICAL-VAPOR-DEPOSITION
    LI, M
    HU, YZ
    IRENE, EA
    LIU, L
    CHRISTENSEN, KN
    MAHER, DM
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (01): : 105 - 110
  • [48] Diffusion and oxidation of plasma-enhanced chemical-vapor-deposition silicon nitride and underlying metals
    Han, GC
    Luo, P
    Li, KB
    Wu, YH
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2001, 19 (03): : 793 - 797
  • [49] Dissociation reactions of hydrogen in remote plasma-enhanced chemical-vapor-deposition silicon nitride
    Boehme, C
    Lucovsky, G
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2001, 19 (05): : 2622 - 2628
  • [50] PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION
    MOLLER, W
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1993, 56 (06): : 469 - 469