I-V characteristics of electron-cyclotron-resonance plasma-enhanced chemical-vapor-deposition silicon nitride thin films

被引：0
|
作者：
Jeon, Yoo-Chan
Lee, Ho-Young
Joo, Seung-Ki
机构：
来源：
| 1600年 / 75期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] IV CHARACTERISTICS OF ELECTRON-CYCLOTRON-RESONANCE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION SILICON-NITRIDE THIN-FILMS
    JEON, YC
    LEE, HY
    JOO, SK
    JOURNAL OF APPLIED PHYSICS, 1994, 75 (02) : 979 - 984
  • [2] LOW-TEMPERATURE DEPOSITION OF SILICON-NITRIDE FILMS BY DISTRIBUTED ELECTRON-CYCLOTRON-RESONANCE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION
    SITBON, S
    HUGON, MC
    AGIUS, B
    ABEL, F
    COURANT, JL
    PUECH, M
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1995, 13 (06): : 2900 - 2907
  • [3] ROLE OF IONS IN ELECTRON-CYCLOTRON-RESONANCE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF SILICON DIOXIDE
    SEAWARD, KL
    TURNER, JE
    NAUKA, K
    NEL, AME
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (01): : 118 - 124
  • [4] Silicon nitride thin films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition
    Lapeyrade, M
    Besland, MP
    Meva'a, C
    Sibaï, A
    Hollinger, G
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1999, 17 (02): : 433 - 444
  • [5] OPTICAL CHARACTERISTICS OF AMORPHOUS-SILICON NITRIDE THIN-FILMS PREPARED BY ELECTRON-CYCLOTRON-RESONANCE PLASMA CHEMICAL-VAPOR-DEPOSITION
    INUKAI, T
    ONO, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1994, 33 (5A): : 2593 - 2598
  • [6] GROWTH OF ER-DOPED SI FILMS BY ELECTRON-CYCLOTRON-RESONANCE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION
    ROGERS, JL
    VARHUE, WJ
    ADAMS, E
    LAVOIE, MA
    FRENETTE, RO
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1994, 12 (05): : 2762 - 2766
  • [7] ELECTRON-CYCLOTRON-RESONANCE PLASMA-ENHANCED METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF TANTALUM OXIDE THIN-FILMS ON SILICON NEAR ROOM-TEMPERATURE
    NAGAHORI, A
    RAJ, R
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1995, 78 (06) : 1585 - 1592
  • [8] IN-SITU MONITORING OF ELECTRON-CYCLOTRON-RESONANCE PLASMA CHEMICAL-VAPOR-DEPOSITION OF HYDROGENATED SILICON-NITRIDE FILMS
    BOUMERZOUG, M
    KRUZELECKY, RV
    MASCHER, P
    THOMPSON, DA
    SURFACE & COATINGS TECHNOLOGY, 1993, 59 (1-3): : 77 - 81
  • [9] Low temperature deposition of silicon nitride films by distributed electron cyclotron resonance plasma-enhanced chemical vapor deposition
    J Vac Sci Technol A, 6 (2900):
  • [10] ELECTRON-CYCLOTRON-RESONANCE PLASMA SOURCE FOR METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF SILICON-OXIDE FILMS
    POPOV, OA
    SHAPOVAL, SY
    YODER, MD
    CHUMAKOV, AA
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1994, 12 (02): : 300 - 307
12345