Evidence for non-uniform interface thickness in strained InGaAs/InP quantum wells

被引：0
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作者：
Camassel, J. [1 ]
Wolter, K. [1 ]
Juillaguet, S. [1 ]
Schwedler, R. [1 ]
Massone, E. [1 ]
Gallmann, B. [1 ]
Laurenti, J.P. [1 ]
机构：
[1] Universite Montpellier II, Montpellier, France
来源：
Materials science & engineering. B, Solid-state materials for advanced technology | 1993年 / B20卷 / 1-2期
关键词：
Semiconductor quantum wells;
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页码：62 / 65
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